| 摘要 |
A method for fabricating a cerium oxide for polishing a semiconductor thin film is provided to minimize the generation of scratch by including fine cerium oxide nano particles as polishing particles. An acid treatment is performed on cerium salt to form an acid-treated cerium salt slurry. The cerium salt slurry is mixed with alkaline metal salt or a diluent of alkaline earth metal salt so as to be sintered. In the acid treatment, a solution of acid selected from a group of nitric acid, hydrochloric acid, acetic acid and a composition thereof. The diluent can be selected from a group of sodium chloride, calcium chloride, calcium carbonate, sodium carbonate and a composition thereof.
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