| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a dual-metal gate electrode structure satisfying the relation "Pn<Pp", and to provide a method for readily manufacturing the semiconductor device of the dual-metal gate electrode structure. SOLUTION: A gate insulating film is formed; a first metal film is deposited on the gate insulating film so as to form the gate electrode of an nMOS transistor; the first metal film of a pMOS transistor region is peeled, and then a silicon film is deposited; the silicon film is made to react with a second metal film having a work function larger than that of the first metal film, so as to form a metal silicon compound that will serve as the gate electrode of a pMOS transistor. COPYRIGHT: (C)2008,JPO&INPIT |
