LAYOUT OF METAL LINE IN MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To provide the layout of the metallic lines of a memory cell for simultaneously removing various constraints relating to the design of a memory cell. SOLUTION: This memory cell is provided with a polysilicon gate 2 running in a first direction. A sequence of layers of metallic lines includes a layer of bit lines 4 running in a second direction substantially orthogonal to the first direction followed by data lines 6 running in the second direction, and then word lines 8 running in the first direction. The data lines 6 are precharged to a value stored while the bit lines 4 are being used to sense data values stored in the memory cell. COPYRIGHT: (C)2008,JPO&INPIT