| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a display device including a protection circuit having a thin film transistor which has small size and high withstand voltage. <P>SOLUTION: In the protection circuit of the display device, a thin film transistor is used in which an amorphous semiconductor layer, a microcrystallin semiconductor layer, a gate insulating layer which is in contact with the microcrystallin semiconductor layer, and a gate electrode layer overlap with each other. Since current drive capability of the microcrystal semiconductor layer is high, the size of the transistor can be made small. In addition, the amorphous semiconductor layer is included, so that withstand voltage can be improved. Here, the display device is a crystal display device or light-emitting device. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
