发明名称 |
Method of fabricating semiconductor memory device in which an oxide film fills a trench in a semiconductor substrate |
摘要 |
A method of fabricating a semiconductor device includes applying a coating oxide film to a surface of a substrate including a semiconductor substrate so that a recess formed in the surface is filled with the coating oxide film, applying a steam oxidation treatment to the substrate at a first temperature, soaking the substrate in heated water while applying a megasonic wave to the substrate in the heated water, and applying a steam oxidation treatment to the substrate at a second temperature higher than the first temperature.
|
申请公布号 |
US7651924(B2) |
申请公布日期 |
2010.01.26 |
申请号 |
US20080233052 |
申请日期 |
2008.09.18 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KAWAMOTO HIROSHI;KAI NAOKI;MATSUNO KOICHI;KAJIMOTO MINORI |
分类号 |
H01L21/76;H01L21/31;H01L21/469 |
主分类号 |
H01L21/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|