| 摘要 |
Provided are manufacturing method, etching apparatus, and manufacturing apparatus for manufacturing a thin film electronic device having a functional film in a high-definition pattern-shape by suppressing generation of particles and improving yield. The method for manufacturing the thin film electronic device is characterized by having a functional film forming step for forming the functional film on a substrate (12), and an etching step for etching into the pattern shape the functional film on the substrate using plasma. In the etching step, plasma is generated by providing pattern forming masks (17, 26) between the functional film on the substrate and plasma generation electrodes (18, 27) that are disposed facing the functional film, and applying a high-frequency voltage to the plasma generation electrodes, a bias voltage is applied to bias electrodes (20, 29) that are disposed on the substrate side, i.e., the reverse side of the plasma generation electrodes, and the functional film on the substrate is etched by means of plasma that passed through the pattern forming masks. The etching device and a manufacturing device (1) are provided for the purpose of manufacturing the thin film electronic device. |
