| 摘要 |
<P>PROBLEM TO BE SOLVED: To carry out a test in consideration of imprint characteristics in a manufacturing step of a ferroelectric memory having a twin sense amplifier, and to prevent defects caused due to imprinting from occurring in a market. <P>SOLUTION: A ferroelectric memory having a first memory cell with a ferroelectric capacitor for storing a single logic level, a second memory cell with a pair of ferroelectric capacitors for storing complementary logic levels, and a twin sense amplifier connected to the first and second memory cells is produced. First, a first logic is written to the first and second memory cells, and the ferroelectric memory is left under a high temperature for progressing imprinting. Then, a second logic, which is inverse to the first logic, is written to the first memory cell. Furthermore, the logic held in the first memory cell is read out; and when the read logic is different from the second logic, defect of the ferroelectric memory is detected. <P>COPYRIGHT: (C)2010,JPO&INPIT |
