CdHgTe photodiodes array

摘要

A photodiodes array includes a useful layer made of CdxHg1-xTe; first doped zones each forming a PN junction with a second doped zone surrounding the first doped zones. The array includes regions located between two PN junctions, with a cadmium concentration gradient decreasing from the upper face to the lower face of the useful layer. A method of making such a photodiodes array includes producing, on the upper face of the useful layer, of a structured layer with at least one through opening, and with a cadmium concentration higher than the cadmium concentration in the useful layer; annealing the useful layer covered by the structured layer, with diffusion of cadmium atoms of the structured layer, from the structured layer to the useful layer; producing at least two PN junctions in the useful layer.

主权项

1. A photodiodes array comprising:
a useful layer made of a semiconducting alloy of cadmium, mercury and tellurium of the CdxHg1-xTe type, the useful layer having an upper face and a lower face; at least two first doped zones, located in the useful layer, each forming a PN junction with a second doped zone surrounding the first doped zones, the PN junctions being flush with the upper face of the useful layer; wherein the array comprises at least one region, located between two neighbouring PN junctions, and has a cadmium concentration gradient decreasing from the upper face to the lower face of the useful layer.