Methods of making a self-aligned channel drift device

摘要

An isolation region is formed in a semiconductor substrate to laterally define and electrically isolate a device region and first and second laterally adjacent well regions are formed in the device region. A gate structure is formed above the device region such that the first well region extends below an entirety of the gate structure and a well region interface formed between the first and second well regions is laterally offset from a drain-side edge of the gate structure. Source and drain regions are formed in the device region such that the source region extends laterally from a source-side edge of the gate structure and across a first portion of the first well region to a first inner edge of the isolation region and the drain region extends laterally from the drain-side edge and across a second portion of the first well region.

主权项

1. A method, comprising:
forming an isolation region in a semiconductor substrate so as to laterally define and electrically isolate a device region; forming a first well region doped with a first type of dopant material in said device region; forming a second well region doped with a second type of dopant material in said device region laterally adjacent to said first well region, wherein said second type of dopant material has an opposite conductivity type from said first type of dopant material; forming a gate structure above said device region, wherein said first well region extends below an entirety of said gate structure such that a well region interface formed between said first and second well regions is laterally offset from a drain-side edge of said gate structure; and forming source and drain regions doped with said second type of dopant material in said device region, wherein said source region extends laterally from a source-side edge of said gate structure and across a first portion of said first well region to a first inner edge of said isolation region and said drain region extends laterally from said drain-side edge and across a second portion of said first well region.