Fabrication method of semiconductor structure

摘要

A fabrication method of a semiconductor structure includes the following steps. First of all, a gate structure is provided on a substrate, and a first material layer is formed on the substrate and the gate structure. Next, boron dopant is implanted to the substrate, at two sides of the gate structure, to form a first doped region, and P type conductive dopant is implanted to the substrate, at the two sides of the gate structure, to form a second doped region. As following, a second material layer is formed on the first material layer. Finally, the second material layer, the first material layer and the substrate at the two sides of the gate structure are etched sequentially, and a recess is formed in the substrate, at the two sides of the gate structure, wherein the recess is positioned within the first doped region.

主权项

1. A fabrication method of a semiconductor structure, comprising:
forming a gate structure on a substrate; forming a first material layer on the substrate and the gate structure; implanting boron into the substrate at two sides of the gate structure, to form a first doped region; implanting P type conductive dopant into the substrate at the two sides of the gate structure, to form a second doped region; forming a second material layer on the first material layer; and performing an etching process, etching the second material layer, the first material layer and the substrate respectively, and forming a recess in the substrate at the two sides of the gate structure, wherein the recess is positioned within the first doped region and has a depth smaller than a depth of the first doped region.