Semiconductor device

摘要

A semiconductor device according to the present invention has a MIS structure that includes a semiconductor layer, a gate insulating film in contact with the semiconductor layer, and a gate electrode formed on the gate insulating film, and the gate insulating film includes an AlON layer with a nitrogen composition of 5% to 40%. A semiconductor device is thereby provided with which electron trapping in the gate insulating film can be reduced and shifting of a threshold voltage Vth can be suppressed.

主权项

1. A semiconductor device comprising an MIS structure that includes:
a semiconductor layer including a first conductivity type drain region, a second conductivity type body region and a first conductivity type source region; a source trench penetrating through the source region and the body region from a front surface of the semiconductor layer such that the source trench reaches the drain region; a gate insulating film in contact with the semiconductor layer; and a gate electrode formed on the gate insulating film such that the gate electrode faces the body region across the gate insulating film; wherein the gate insulating film includes an AlON layer with a nitrogen composition of 5% to 40%.