Semiconductor device having metal gate and manufacturing method thereof

摘要

A semiconductor device having metal gate includes a substrate, a metal gate positioned on the substrate, a high-k gate dielectric layer, and an epitaxial channel layer positioned in between the high-k gate dielectric layer and the substrate. A length of the epitaxial channel layer is larger than a length of the metal gate, and a bottom of the epitaxial channel layer and the substrate are coplanar.

主权项

1. A semiconductor device having metal gate, comprising:
a substrate; a metal gate positioned on the substrate; a high-k gate dielectric layer; a plurality of lightly doped drains (LDDs) disposed in the substrate, wherein a top surface of the LDDs is the same as a top surface of the substrate; and an epitaxial channel layer positioned in between the high-k gate dielectric layer and the substrate, a length of the epitaxial channel layer being larger than a length of the metal gate, wherein a bottom surface of the epitaxial channel layer and the top surfaces of the substrate both inside the semiconductor device and outside the semiconductor device are coplanar, respectively.