Silicide region of gate-all-around transistor

摘要

The disclosure relates to a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate; a nanowire structure protruding from the substrate comprising a channel region between a source region and a drain region; a pair of silicide regions extending into opposite sides of the source region, wherein each of the pair of silicide regions comprising a vertical portion adjacent to the source region and a horizontal portion adjacent to the substrate; and a metal gate surrounding a portion the channel region.

主权项

1. A semiconductor device comprising:
a nanowire structure protruding from a substrate, the nanowire structure comprising a channel region between a source region and a drain region, the channel region having a first outer diameter; a silicide region, the silicide region comprising a vertical portion adjacent to and annularly disposed around the source region, the silicide region further comprising a horizontal portion adjacent to the substrate and annularly disposed around the source region, wherein a second outer diameter of the vertical portion is substantially equal to the first outer diameter; and a metal gate surrounding a portion of the channel region.