发明名称 |
Thin-film ambipolar logic |
摘要 |
An ambipolar electronic device is disclosed. The device may include a field-effect transistor (FET), which may have a handle substrate layer, two contacts and an inorganic crystalline layer between the handle substrate layer and the contacts. The inorganic crystalline layer may have a doped channel region between the contacts. The FET may also have a dielectric layer between the contacts, attached to the inorganic crystalline layer, and a gate layer, attached to the dielectric layer. The FET may conduct current, in response to a first gate voltage applied to the gate layer, using electrons as a majority carrier, along the length of the channel region between the contacts. The FET may also conduct current, in response to a second gate voltage applied to the gate layer, using holes as a majority carrier, along the length of the channel region between the contacts. |
申请公布号 |
US9397118(B2) |
申请公布日期 |
2016.07.19 |
申请号 |
US201414318846 |
申请日期 |
2014.06.30 |
申请人 |
International Business Machines Corporation |
发明人 |
Hekmatshoartabari Bahman;Shahidi Ghavam G. |
分类号 |
H01L27/12;H01L21/762;H01L21/285;H01L29/45;H01L29/786;H01L29/66 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
Percello Louis J.;Bowman Nicholas D. |
主权项 |
1. An ambipolar electronic device comprising:
a first FET (field-effect transistor) having:
a handle substrate layer;a first contact;a second contact;an inorganic crystalline layer formed between a top surface of the handle substrate layer and the first and second contacts and having a channel region with a length extending between the first contact and the second contact;a dielectric layer attached, between the first contact and the second contact, to a top surface of the inorganic crystalline layer; anda gate layer, attached to a top surface of the dielectric layer;wherein the first FET is configured to:
conduct current, in response to a first gate voltage applied to the gate layer and using electrons as a majority carrier, along the length of the channel region between the first contact and the second contact; andconduct current, in response to a second gate voltage applied to the gate layer and using holes as a majority carrier, along the length of the channel region between the first contact and the second contact. |
地址 |
Armonk NY US |