Method for producing a semiconductor component with insulated semiconductor mesas

摘要

A method for producing a semiconductor component is provided. The method includes providing a semiconductor body with a first surface and a second surface opposite to the first surface, etching an insulation trench from the first surface partially into the semiconductor body, forming a first insulation layer on one or more sidewalls of the insulation trench, processing the second surface by at least one of grinding, polishing and a CMP-process to expose the first insulation layer, and depositing on the processed second surface a second insulation layer which extends to the first insulation layer.

主权项

1. A method for producing a semiconductor component, comprising:
providing a semiconductor body with a first surface and a second surface opposite to the first surface; forming an insulation trench from the first surface into the semiconductor body so that the insulation trench is, in a projection onto the first surface, substantially ring-shaped; forming a first insulation layer at least on one or more sidewalls of the insulation trench so that the first insulation layer forms, in the projection onto the first surface, a first closed loop; removing semiconductor material of the semiconductor body from the second surface to expose bottom portions of the first insulation layer and to form a back surface; depositing a second insulation layer on the back surface such that at least two semiconductor mesas are formed which are insulated from each other by the first insulation layer and the second insulation layer; forming a contact opening in the second insulation layer that extends to one of the at least two semiconductor mesas, such that the insulation trench remains covered by the second insulation layer at the back surface after the contact opening is formed in the second insulation layer; forming an electrode that contacts the one of the at least two semiconductor mesas at the second surface through the contact opening, the electrode being separated from the insulation trench by the second insulation layer; and forming a second insulation trench which forms, in the projection onto the first surface, a second closed loop within the first closed loop.