Thin film semiconductors made through low temperature process

摘要

Embodiments disclosed herein relate to a TFT and methods for manufacture thereof. Specifically, the embodiments herein relate to methods for forming a semiconductor layer at a low temperature for use in a TFT. The semiconductor layer may be formed by depositing a nitride or oxynitride layer, such as zinc nitride or oxynitride, and then converting the nitride layer into an oxynitride layer with a different oxygen content. The oxynitride layer is formed by exposing the deposited nitride layer to a wet atmosphere at a temperature between about 85 degrees Celsius and about 150 degrees Celsius. The exposure temperature is lower than the typical deposition temperature used for forming the oxynitride layer directly or annealing, which may be performed at temperatures of about 400 degrees Celsius.

主权项

1. A method of fabricating a thin film transistor, comprising:
forming a gate electrode over a substrate; depositing a gate dielectric layer over the gate electrode and the substrate; forming a semiconductive layer over the gate dielectric layer, the forming comprising:
depositing a nitride layer over the gate dielectric layer; andexposing the nitride layer to a wet atmosphere to convert the nitride layer into an oxynitride layer; and forming source and drain electrodes over the semiconductive layer.