OPTOELECTRONIC SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

摘要

A device comprising a semiconductor body (2), a first metal layer (3) and a second metal layer (4) is provided, wherein the first metal layer is arranged between the semiconductor body and the second metal layer. The semiconductor body has a first semiconductor layer (21), a second semiconductor layer (22) and an active layer (23). The device has a plated-through-hole (24), which extends through the second semiconductor layer and the active layer for the electrical contacting of the first semiconductor layer. The second metal layer includes a first subregion (41) and a second subregion (42) that is kept at a lateral distance from the first subregion by an intermediate space (40), wherein the first subregion is electrically connected to the plated-through-hole and is assigned a first electrical polarity of the device. The first metal layer completely bridges the intermediate space laterally in plan view and is assigned a second electrical polarity of the device that is different from the first electrical polarity. A method for producing such a device is also provided.