MAGNETIC MEMORY DEVICE

摘要

According to one embodiment, a magnetic memory device includes a magnetoresistive effect element including a first magnetic layer in which a first layer containing Co, Fe and B and a second layer containing Co, Fe and a predetermined element selected from Tb, Dy and Gd are stacked, a second magnetic layer, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetoresistive effect element is set to low-resistance and high-resistance states by applying first and second voltages respectively to allow current to flow from the first magnetic layer to the second magnetic layer, and one of the low-resistance and high-resistance states is read by applying a third voltage to allow current to flow from the second magnetic layer to the first magnetic layer.

主权项

1. A magnetic memory device comprising a magnetoresistive effect element comprising a first magnetic layer in which a first layer containing Co, Fe and B and a second layer containing Co, Fe and a predetermined element selected from Tb, Dy and Gd are stacked; a second magnetic layer; and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, the first layer being located between the second layer and the nonmagnetic layer, wherein
the magnetoresistive effect element is set to a low-resistance state by applying a first voltage to the magnetoresistive effect element to allow current to flow from the first magnetic layer to the second magnetic layer, the magnetoresistive effect element is set to a high-resistance state having a resistance higher than that of the low-resistance state by applying a second voltage lower than the first voltage to the magnetoresistive effect element to allow current to flow from the first magnetic layer to the second magnetic layer, and one of the low-resistance state and the high-resistance state is read from the magnetoresistive effect element by applying a third voltage to the magnetoresistive effect element to allow current to flow from the second magnetic layer to the first magnetic layer.