| 发明名称 |
METHOD AND SYSTEM FOR EPITAXY PROCESSES ON MISCUT BULK SUBSTRATES |
| 摘要 |
A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the in-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance. |
| 申请公布号 |
US2016268476(A1) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201614992939 |
申请日期 |
2016.01.11 |
| 申请人 |
SORAA, INC. |
发明人 |
CHAKRABORTY ARPAN;GRUNDMANN MICHAEL;TYAGI ANURAG |
| 分类号 |
H01L33/32;H01L33/06;H01L33/12;H01L33/16;H01L33/00 |
主分类号 |
H01L33/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising:
a bulk (Al,Ga,In)N substrate having a width; a plurality of epitaxial layers overlying the bulk (Al,Ga,In)N substrate and defining a light-emitting device structure, wherein a top surface of the device structure is characterized by a nominal c-plane crystallographic orientation miscut by an angle from 0.35 degrees to 1 degrees toward an m-direction; and wherein the epitaxial layers of the light-emitting device structure are configured to have a standard deviation of photoluminescent wavelength uniformity of less than 1% across the width. |
| 地址 |
FREMONT CA US |
