SOURCE/DRAIN REGIONS FOR FIN FIELD EFFECT TRANSISTORS AND METHODS OF FORMING SAME

摘要

A method for forming a semiconductor device includes forming a fin extending upwards from a semiconductor substrate and forming a sacrificial layer on sidewalls of a portion of the fin. The method further includes forming a spacer layer over the sacrificial layer and recessing the portion of the fin past a bottom surface of the sacrificial layer. The recessing forms a trench disposed between sidewall portions of the spacer layer. At least a portion of the sacrificial layer is removed, and a source/drain region is formed in the trench.