发明名称 LIGHT EMITTING DEVICE
摘要 It is an object of the present invention to prevent an insulating film from peeling in a section where the insulating film is adjacent to a sealing region. Over a first substrate 104, a pixel portion 100 provided with a light emitting element, a source driver 101, a gate driver 102, and a sealing region 103 are provided. A light emitting element is sealed between the first substrate 104 and a second substrate 110 by a sealant 108. An insulating film 107 serves as a partition wall of the light emitting element. An end portion of the insulating film 107 which is adjacent to the sealing region 103 does not overlap with a step formed by a side surface and an upper surface of a conductive film 106 which serves as a wiring.
申请公布号 US2016268365(A1) 申请公布日期 2016.09.15
申请号 US201615162667 申请日期 2016.05.24
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 AMANO Seiko
分类号 H01L27/32;H01L51/52 主分类号 H01L27/32
代理机构 代理人
主权项 1. A display device comprising: a first substrate comprising a pixel portion and a sealing region; a sealant formed in the sealing region which surrounds the pixel portion; a second substrate fixed to the first substrate by the sealant; a transistor over the first substrate; a light emitting element over the first substrate; a conductive film over the first substrate and in contact with the sealant; a first insulating film over an edge portion of an electrode of the light emitting element, and wherein a light emitting layer of the light emitting element is positioned over the first insulating film; a second insulating film over the first substrate; a first gate driver over the first substrate; and a second gate driver over the first substrate, wherein the first insulating film is positioned in the pixel portion, wherein the second insulating film is positioned in a region, wherein the sealing region is positioned between the region and the pixel portion, wherein the first insulating film and the second insulating film are formed of the same material, wherein the first insulating film and the second insulating film comprise organic resin, wherein the conductive film and a source electrode and a drain electrode of the transistor are formed of the same material, and wherein the second substrate overlaps with a part of the second insulating film.
地址 Atsugi-shi JP