发明名称 SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, AND IMAGING SYSTEM
摘要 A solid-state imaging device includes a pixel including a photoelectric conversion element, a floating diffusion layer, a transfer transistor, a reset transistor, and an amplifier transistor, and a control unit configured to supply a first voltage to a gate of the reset transistor when the charges are accumulated in the photoelectric conversion element, the first voltage being set between a second voltage and a third voltage; subsequently supply the second voltage to the gate of the reset transistor when the reset transistor is turned on in order to reset the potential of the floating diffusion layer, and subsequently supply the third voltage to the gate of the reset transistor when the amplifier transistor outputs the signal based on the potential of the floating diffusion layer.
申请公布号 US2016277690(A1) 申请公布日期 2016.09.22
申请号 US201615057351 申请日期 2016.03.01
申请人 CANON KABUSHIKI KAISHA 发明人 Inui Fumihiro
分类号 H04N5/359;H04N5/217;H04N5/378;H04N5/369;H01L27/146;H04N5/3745 主分类号 H04N5/359
代理机构 代理人
主权项 1. A solid-state imaging device comprising: a pixel including: a photoelectric conversion element;a floating diffusion layer;a transfer transistor configured to transfer charges generated in the photoelectric conversion element to the floating diffusion layer;a reset transistor configured to reset a potential of the floating diffusion layer; andan amplifier transistor configured to output a signal based on the potential of the floating diffusion layer; and a control unit configured to: supply a first voltage to a gate of the reset transistor when charges are accumulated in the photoelectric conversion element, the first voltage being a voltage between a second voltage and a third voltage;subsequently supply the second voltage to the gate of the reset transistor when the reset transistor is turned on in order to reset the potential of the floating diffusion layer; andsubsequently supply the third voltage to the gate of the reset transistor when the amplifier transistor outputs the signal based on the potential of the floating diffusion layer.
地址 Tokyo JP