Semiconductor device and method for producing the same

摘要

A capacitive component region is formed below a temperature detecting diode or below a protective diode. In addition, the capacitive component region is formed below an anode metal wiring line connecting the temperature detecting diode and an anode electrode pad and below a cathode metal wiring line connecting the temperature detecting diode and a cathode electrode pad. The capacitive component region is an insulating film interposed between polysilicon layers. Specifically, a first insulating film, a polysilicon conductive layer, and a second insulating film are sequentially formed on a first main surface of a semiconductor substrate, and the temperature detecting diode, the protective diode, the anode metal wiring line, or the cathode metal wiring line is formed on the upper surface of the second insulating film. Therefore, it is possible to improve the static electricity resistance of the temperature detecting diode or the protective diode.

主权项

1. A semiconductor device comprising:
a semiconductor element that makes a current flow in a thickness direction of a semiconductor substrate; a plurality of first insulating films formed on a first main surface of the semiconductor substrate; a plurality of conductive layers each formed on a respective one of the plurality of first insulating films; each of the plurality of conductive layers being provided with a diode; a plurality of second insulating films each formed on a respective one of the plurality of conductive layers; a first-conductivity-type layer and a second-conductivity-type layer formed on each of the plurality of second insulating films and forming the diode; a plurality of first capacitors each having a respective one of the plurality of second insulating films between the first-conductivity-type layer and a respective one of the plurality of conductive layers as a first capacitive component region; and a plurality of second capacitors each having a respective one of the plurality of second insulating films between the second-conductivity-type layer and a respective one of the plurality of conductive layers as a second capacitive component region, wherein each diode is connected in parallel, and the plurality of conductive layers are electrically insulated from each other.