Nonvolatile memory device, a storage device having the same and an operating method of the same

摘要

An operating method of a nonvolatile memory device including a plurality of strings each string including at least two pillars penetrating wordlines disposed at different layers. The operating method includes applying unselected wordline voltages to unselected wordlines, and applying a selected wordline voltage to a selected wordline, and the unselected wordline voltage applied to the same layer as a layer of the selected wordline is different from the unselected wordline voltage applied to a different layer than the layer of the selected wordline.

主权项

1. An operating method of a nonvolatile memory device including a plurality of strings each string including at least two pillars penetrating wordlines disposed at different layers, the operating method comprising:
applying unselected wordline voltages to unselected wordlines; and applying a selected wordline voltage to a selected wordline, wherein the unselected wordline voltage applied to the same layer as a layer of the selected wordline is different from the unselected wordline voltage applied to a different layer than the layer of the selected wordline, wherein during a program operation including a pass voltage applying period and a program voltage applying period, the different wordline voltages are applied at one of the pass voltage applying period and the program voltage applying period.