发明名称 |
CYCLIC DEPOSITION METHOD FOR THIN FILM AND MANUFACTURING METHOD FOR SEMICONDUCTOR, AND SEMICONDUCTOR DEVICE |
摘要 |
Provided is a method of cyclically depositing a thin film including: performing an oxide depositing operation of repeatedly performing a deposition operation, a first purge operation, a reaction operation, and a second purge operation, wherein the deposition operation deposits silicon on a target by injecting a silicon precursor into a chamber into which the target is loaded, the first purge operation removes a non-reacted silicon precursor and a reacted byproduct from inside the chamber, the reaction operation supplies a first reaction source including oxygen into the chamber to form the deposited silicon as an oxide including silicon, and the second purge operation removes a non-reacted first reaction source and a reacted byproduct from the inside of the chamber; and performing a plasma processing operation of supplying plasma made of a second reaction source including nitrogen to the inside of the chamber to process the oxide including the silicon. |
申请公布号 |
US2016300723(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201414915919 |
申请日期 |
2014.09.23 |
申请人 |
EUGENE TECHNOLOGYCO., LTD. |
发明人 |
KIM Hai-Won;KIM Seok-Yun |
分类号 |
H01L21/28;H01L29/423;H01L29/792;H01L29/66;H01L21/02;H01L29/51 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
1. A method of cyclically depositing a thin film, the method comprising:
performing an oxide depositing operation of repeatedly performing a deposition operation, a first purge operation, a reaction operation, and a second purge operation, wherein the deposition operation deposits silicon on a target by injecting a silicon precursor into a chamber into which the target is loaded, the first purge operation removes a non-reacted silicon precursor and a reacted byproduct from inside the chamber, the reaction operation supplies a first reaction source comprising oxygen into the chamber to form the deposited silicon as an oxide comprising silicon, and the second purge operation removes a non-reacted first reaction source and a reacted byproduct from the inside of the chamber; and performing a plasma processing operation of supplying plasma made of a second reaction source including nitrogen to the inside of the chamber to process the oxide comprising the silicon. |
地址 |
Gyeonggi-do KR |