ELIMINATING FIRST WAFER METAL CONTAMINATION EFFECT IN HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION SYSTEMS

摘要

Methods and apparatuses for conditioning chambers using a two-stage process involving a low bias and a high bias stage are provided. Methods also involve clamping a protective electrostatic chuck cover to a pedestal by applying a bias to the electrostatic chuck during the high bias stage while cooling the protective electrostatic chuck cover, such as by flowing helium to the backside of the cover.

主权项

1. A method comprising:
(a) performing a first stage comprising exposing a chamber to plasma to deposit a film on surfaces of the chamber while no wafer is present in the chamber at a first bias power, the bias power applied to an electrostatic chuck in the chamber; and (b) after performing the first stage, performing a second stage comprising exposing the chamber to plasma to deposit a second film on surfaces of the chamber while no wafer is present in the chamber at a second bias power, wherein the second bias power is greater than the first bias power.