发明名称 FARADAIC ENERGY STORAGE DEVICE STRUCTURES AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS
摘要 Embodiments of the present disclosure are directed towards Faradaic energy storage device structures and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a substrate having a plurality of holes disposed in a surface of the substrate, the plurality of holes being configured in an array of multiple rows and an active material for Faradaic energy storage disposed in the plurality of holes to substantially fill the plurality of holes. Other embodiments may be described and/or claimed.
申请公布号 US2016300668(A1) 申请公布日期 2016.10.13
申请号 US201615184847 申请日期 2016.06.16
申请人 Intel Corporation 发明人 Pande Priyanka;Pint Cary L.;Liu Yang;Jin Wei;Holzwarth Charles;Gardner Donald
分类号 H01G11/84;G03F7/32;G03F7/20;H01M12/00;C23F1/02 主分类号 H01G11/84
代理机构 代理人
主权项 1. A method comprising: forming a plurality of holes in a surface of a substrate; and depositing an active material for Faradaic energy storage to substantially fill the plurality of holes.
地址 Santa Clara CA US