Photodiode array

摘要

A photodiode array has a plurality of photodetector channels formed on an n-type substrate having an n-type semiconductor layer, with a light to be detected being incident to the photodetector channels. The array comprises: a p−-type semiconductor layer on the n-type semiconductor layer of the substrate; resistors is provided to each of the photodetector channels and is connected to a signal conductor at one end thereof; and an n-type separating part between the plurality of photodetector channels. The p−-type semiconductor layer forms a pn junction at the interface between the substrate, and comprises a plurality of multiplication regions for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels.

主权项

1. An avalanche photodiode array comprising:
a substrate; an afterpulse restraining layer formed on the substrate; a first semiconductor layer of a first conductivity type, the first semiconductor layer being formed on the afterpulse restraining layer; a second semiconductor layer comprised of an epitaxial semiconductor layer of a second conductivity type, the second semiconductor layer being formed on the first semiconductor layer to form a pn junction between the first and second semiconductor layers, wherein the first semiconductor layer is positioned between the pn junction and the afterpulse restraining layer; and a plurality of resistors each of which is electrically connected to the second semiconductor layer and a reading part of a signal conductor.