| 发明名称 | Semiconductor memory device and method for manufacturing same | ||
| 摘要 | According to one embodiment, a semiconductor memory device includes a substrate including a major surface; a plurality of first films having conductivity or semiconductivity, the first films being provided above the substrate and extending in a first direction inclined with respect to the major surface; a plurality of second films having conductivity, the second films being provided above the substrate and extending in a second direction inclined with respect to the major surface and crossing the first direction; and a plurality of storage films provided in crossing sections of the first films and the second films. | ||
| 申请公布号 | US9502470(B2) | 申请公布日期 | 2016.11.22 |
| 申请号 | US201514642911 | 申请日期 | 2015.03.10 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Takahashi Atsushi;Sasaki Toshiyuki;Imamura Tsubasa |
| 分类号 | H01L27/24;H01L21/311;H01L21/3065;H01L21/308;H01L45/00;H01L21/28;H01L27/115 | 主分类号 | H01L27/24 |
| 代理机构 | Finnegan, Henderson, Farabrow, Garrett & Dunner LLP | 代理人 | Finnegan, Henderson, Farabrow, Garrett & Dunner LLP |
| 主权项 | 1. A semiconductor memory device comprising: a substrate including a major surface; a plurality of first films having conductivity or semiconductivity, the first films being provided above the substrate and extending in a first direction inclined with respect to the major surface; a plurality of second films having conductivity, the second films being provided above the substrate and extending in a second direction inclined with respect to the major surface and crossing the first direction; and a plurality of storage films provided in crossing sections of the first films and the second films. | ||
| 地址 | Tokyo JP | ||