发明名称 Electrically reconfigurable interposer with built-in resistive memory
摘要 An integrated interposer may include a substrate and a resistive-type non-volatile memory (NVM) array(s). The integrated interposer may also include a contact layer on a first surface of the substrate. The contact layer may include interconnections configured to couple the resistive-type NVM array(s) to a die(s). The resistive-type NVM array(s) may be partially embedded within the contact layer of the integrated interposer.
申请公布号 US9502469(B2) 申请公布日期 2016.11.22
申请号 US201414527267 申请日期 2014.10.29
申请人 QUALCOMM INCORPORATED 发明人 Lu Yu;Ramachandran Vidhya;Kang Seung Hyuk
分类号 H01L29/49;H01L27/24;H01L45/00;H01L23/538;H01L25/065;H01L23/498 主分类号 H01L29/49
代理机构 Seyfarth Shaw LLP 代理人 Seyfarth Shaw LLP
主权项 1. An integrated interposer, comprising: a substrate; at least one resistive-type non-volatile memory (NVM) array; a contact layer on a first surface of the substrate including interconnections configured to couple the at least one resistive-type NVM array to at least one die, the at least one resistive-type NVM array being at least partially embedded within the contact layer of the integrated interposer; and peripheral circuitry embedded within the integrated interposer and configured to control access to/from the at least one resistive-type NVM array.
地址 San Diego CA US