发明名称 |
Electrically reconfigurable interposer with built-in resistive memory |
摘要 |
An integrated interposer may include a substrate and a resistive-type non-volatile memory (NVM) array(s). The integrated interposer may also include a contact layer on a first surface of the substrate. The contact layer may include interconnections configured to couple the resistive-type NVM array(s) to a die(s). The resistive-type NVM array(s) may be partially embedded within the contact layer of the integrated interposer. |
申请公布号 |
US9502469(B2) |
申请公布日期 |
2016.11.22 |
申请号 |
US201414527267 |
申请日期 |
2014.10.29 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
Lu Yu;Ramachandran Vidhya;Kang Seung Hyuk |
分类号 |
H01L29/49;H01L27/24;H01L45/00;H01L23/538;H01L25/065;H01L23/498 |
主分类号 |
H01L29/49 |
代理机构 |
Seyfarth Shaw LLP |
代理人 |
Seyfarth Shaw LLP |
主权项 |
1. An integrated interposer, comprising:
a substrate; at least one resistive-type non-volatile memory (NVM) array; a contact layer on a first surface of the substrate including interconnections configured to couple the at least one resistive-type NVM array to at least one die, the at least one resistive-type NVM array being at least partially embedded within the contact layer of the integrated interposer; and peripheral circuitry embedded within the integrated interposer and configured to control access to/from the at least one resistive-type NVM array. |
地址 |
San Diego CA US |