Semiconductor bonding structure and process

摘要

A system and method for bonding semiconductor devices is provided. An embodiment comprises halting the flow of a eutectic bonding material by providing additional material of one of the reactants in a grid pattern, such that, as the eutectic material flows into the additional material, the additional material will change the composition of the flowing eutectic material and solidify the material, thereby stopping the flow. Other embodiments provide for additional layouts to put the additional material into the path of the flowing eutectic material.

主权项

1. A semiconductor device comprising:
a first substrate; a second substrate; a eutectic bonding material interposed between the first substrate and the second substrate, the eutectic bonding material comprising:
an initiating portion with a first proportion of a first eutectic component and a second eutectic component; anda halting portion surrounding the initiating portion, the halting portion having a second proportion of the first eutectic component and the second eutectic component that is different from the first proportion; and a block laterally separated from the eutectic bonding material, wherein the block comprises the first eutectic component; wherein the eutectic bonding material bonds the first substrate and the second substrate.