Semiconductor device and driver circuit with drain and isolation structure interconnected through a diode circuit, and method of manufacture thereof

摘要

Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within area of the substrate contained by the isolation structure, and a diode circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a drain region of the second conductivity type, and the diode circuit is connected between the isolation structure and the drain region. The diode circuit may include one or more Schottky diodes and/or PN junction diodes. In further embodiments, the diode circuit may include one or more resistive networks in series and/or parallel with the Schottky and/or PN diode(s).

主权项

1. A method for forming a semiconductor device, the method comprising the steps of:
forming a buried layer below a top substrate surface of a semiconductor substrate having a first conductivity type, wherein the buried layer has a second conductivity type that is different from the first conductivity type; forming a sinker region between the top substrate surface and the buried layer, wherein the sinker region has the second conductivity type, and an isolation structure is formed by the sinker region and the buried layer; forming an active device in a portion of the semiconductor substrate contained by the isolation structure, wherein the active device includes
a drift region of the second conductivity type within a central portion of the active area and extending from the top substrate surface into the semiconductor substrate to a first depth, anda drain region of the second conductivity type, wherein the drain region extends into the drift region from the top substrate surface to a second depth that is less than the depth of the drift region; and forming a diode circuit connected between the isolation structure and the drain region.