ZrAION films

摘要

Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium aluminum oxynitride (ZrAlON) for use in a variety of electronic devices. Forming the dielectric layer may include depositing zirconium oxide using atomic layer deposition and precursor chemicals, followed by depositing aluminum nitride using precursor chemicals, and repeating. The dielectric layer may be used as the gate insulator of a MOSFET, a capacitor dielectric, and a tunnel gate insulator in flash memories.

主权项

1. A method comprising:
forming zirconium aluminum oxynitride by forming an insulating zirconium compound and an insulating aluminum compound using a monolayer by monolayer sequencing technique and processing the formed insulating zirconium compound and the formed insulating aluminum compound into zirconium aluminum oxynitride; and forming an electrically conductive material adjacent the zirconium aluminum oxynitride.