Method for producing SiC substrate

摘要

A method of manufacturing a SiC substrate of the invention includes at least an oxide film-forming process of forming an oxide film (10) to cover a surface (1a) of the SiC substrate (1); and a planarization process of polishing the SiC substrate (1) from an oxide film side (10) in accordance with a CMP method so as to remove the oxide film (10), and of polishing the surface (1a) of the SiC substrate (1) to planarize the surface (1a).

主权项

1. A method of manufacturing a SiC substrate which includes a process of polishing and planarizing a surface of the SiC substrate, the method comprising at least:
an oxide film-forming process of forming an oxide film to cover the surface of the SiC substrate; and a planarization process of polishing the SiC substrate from an oxide film side in accordance with a chemical mechanical polishing (CMP) method so as to completely remove the oxide film, and of polishing the surface of the SiC substrate to planarize the surface, wherein in the oxide film-forming process, the oxide film is formed by a P-CVD method or a RF sputtering method and the oxide film is formed in a film thickness of 0.5 μm or greater.