发明名称 Charged particle beam apparatus
摘要 An object of the present invention is to provide a method and an apparatus capable of measuring a potential of a sample surface by using a charged particle beam, or of detecting a compensation value of a variation in an apparatus condition which changes due to sample charging, by measuring a sample potential caused by irradiation with the charged particle beam. In order to achieve the object, a method and an apparatus are provided in which charged particle beams (2(a), 2(b)) emitted from a sample (23) are deflected by a charged particle deflector (33) in a state in which the sample (23) is irradiated with a charged particle beam (1), and information regarding a sample potential is detected by using a signal obtained at that time.
申请公布号 US9502212(B2) 申请公布日期 2016.11.22
申请号 US201414760259 申请日期 2014.01.22
申请人 Hitachi High-Technologies Corporation 发明人 Mizuhara Yuzuru;Isawa Miki;Yamazaki Minoru;Tamura Hitoshi;Kazumi Hideyuki
分类号 H01J37/26;H01J37/147;H01J37/244;H01J37/28 主分类号 H01J37/26
代理机构 Crowell & Moring LLP 代理人 Crowell & Moring LLP
主权项 1. A charged particle beam apparatus comprising: a detector that detects a charged particle which is emitted from a sample due to irradiation with a charged particle beam emitted from a charged particle source, or detects a charged particle emitted when the charged particle emitted from the sample collides with a secondary charged particle generation member; a deflector that deflects a charged particle directed toward the charged particle source side from the sample side in a state in which the charged particle beam emitted from the charged particle source is applied to the sample; and a controller that obtains a sample potential on the basis of a movement amount of the charged particle deflected by the deflector, or a movement amount of a display object in an image which is formed by using the charged particle.
地址 Tokyo JP