| 摘要 |
<p>PURPOSE: A method for manufacturing a phase shift mask is provided to maintain a vertical line width without the damage of a shield pattern by preventing the change of sidewall profile of the shield pattern. CONSTITUTION: A phase shift layer, a shield layer and a shield protective layer are successively formed. A resist layer pattern is formed on the shield protective layer. The shield protective layer is etched using the resist layer pattern as a mask to form a shield protective layer pattern(130a). The shield layer is etched to form a shield pattern(121). The resist layer pattern is removed to expose the shield protective pattern. The phase shift layer is etched using the exposed shield protective pattern as a mask to form a phase shift layer pattern(111).</p> |
