发明名称 Thin-film structure having reliably removable oxide layer formed on bump exposed at surface of insulating layer and manufacturing method therefor
摘要 In a thin-film structure, since a flat face of a bump, which is exposed at the surface of an insulating layer and is to be in contact with an electrode layer, is an exposed surface of a nickel layer, an oxide layer on the flat face can be reliably removed by using ion-milling or sputter etching.
申请公布号 US6476485(B1) 申请公布日期 2002.11.05
申请号 US20000569155 申请日期 2000.05.11
申请人 ALPS ELECTRIC CO., LTD. 发明人 SATO KIYOSHI
分类号 G11B5/31;G11B5/39;H01F17/00;H01F41/04;H01L23/498;H05K3/24;H05K3/40;(IPC1-7):H01L29/82;H01L43/00;H01L23/48;H01L23/52;H01L29/40;G11B5/127 主分类号 G11B5/31
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