| 发明名称 |
Etching method and apparatus |
| 摘要 |
A subcritical or supercritical water is used to selectively etch a silicon nitride film against a silicon dioxide film or to selectively etch a silicon dioxide film against a crystalline silicon region. This method is applicable to a process of forming a MISFET or a charge emitting device.
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| 申请公布号 |
US6475403(B2) |
申请公布日期 |
2002.11.05 |
| 申请号 |
US20010771549 |
申请日期 |
2001.01.30 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MORITA KIYOYUKI |
| 分类号 |
C04B41/53;C04B41/91;H01L21/311;(IPC1-7):H01L21/302;C23F1/00 |
主分类号 |
C04B41/53 |
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