摘要 |
<p>PURPOSE: A backside illumination type imaging device, an imaging device and a method for manufacturing the same are provided to realize the function of an electric shutter with a reduced fixed-pattern noise by preventing blue sensitivity from reducing and discharging unnecessary charges. CONSTITUTION: A first semiconductor support substrate(2), an insulation layer(9) and a conductive semiconductor layer(11) are successively formed on a silicon on insulator(SOI) substrate(30). A photoelectric transformation area includes a photo-detection unit. A charge transmission unit transmits a signal charge generated from the photoelectric transformation area to an output unit for signal. The first semiconductor support substrate and the SOI substrate are fixed on a second semiconductor support substrate. The first semiconductor support substrate is removed from the SOI substrate. An ion implantation is performed to the conductive semiconductor layer.</p> |