发明名称 |
Semiconductor device, and production method for manufacturing such semiconductor device |
摘要 |
A semiconductor device has a semiconductor substrate, and a multi-layered wiring arrangement provided thereon. The multi-layered wring arrangement includes at least one insulating layer structure having a metal wiring pattern formed therein. The insulating layer structure includes a first SiOCH layer, a second SiOCH layer formed on the first SiOCH layer, and a silicon dioxide (SiO2) layer formed on the second SiOCH layer. The second SiOCH layer features a carbon (C) density lower than that of the first SiOCH layer, a hydrogen (H) density lower than that of the first SiOCH layer, and an oxygen (O) density higher than that of the first SiOCH layer.
|
申请公布号 |
US2004183162(A1) |
申请公布日期 |
2004.09.23 |
申请号 |
US20040767786 |
申请日期 |
2004.01.29 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
OHTO KOICHI;USAMI TATSUYA;MORITA NOBORU;OHNISHI SADAYUKI;ARITA KOJI;KITAO RYOHEI;SASAKI YOICHI |
分类号 |
H01L23/522;H01L21/3205;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):H01L23/58 |
主分类号 |
H01L23/522 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|