| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a reflective electrode of a metal having high reflectivity without decreasing the reflectivity. <P>SOLUTION: A semiconductor light emitting device includes an n-type semiconductor layer 11, a p-type semiconductor layer 13, and an active layer 12 having a multilayer quantum well structure sandwiched by the n-type semiconductor layer and the p-type semiconductor layer. A reflective electrode 14 is formed of a metal exhibiting high reflectivity to emission light from the active layer 12 on the p-type semiconductor layer 13, a nonmetallic protective layer 15 is formed on the reflective electrode 14, and a first cover electrode 16 electrically connected with the reflective electrode 14 through an opening groove 15a is formed on the protective layer 15. <P>COPYRIGHT: (C)2007,JPO&INPIT |
