发明名称 |
Methods of fabricating semiconductor devices including channel layers having improved defect density and surface roughness characteristics |
摘要 |
A method of fabricating a semiconductor device including a channel layer includes forming a single crystalline semiconductor layer on a semiconductor substrate. The single crystalline semiconductor layer includes a protrusion extending from a surface thereof. A first polishing process is performed on the single crystalline semiconductor layer to remove a portion of the protrusion such that the single crystalline semiconductor layer includes a remaining portion of the protrusion. A second polishing process different from the first polishing process is performed to remove the remaining portion of the protrusion and define a substantially planar single crystalline semiconductor layer having a substantially uniform thickness. A sacrificial layer may be formed on the single crystalline semiconductor layer and used as a polish stop for the first polishing process to define a sacrificial layer pattern, which may be removed prior to the second polishing process. Related methods of fabricating stacked semiconductor memory devices are also discussed.
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申请公布号 |
US7678625(B2) |
申请公布日期 |
2010.03.16 |
申请号 |
US20070962742 |
申请日期 |
2007.12.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM JONG-HEUN;HONG CHANG-KI;YOON BO-UN;YUN SEONG-KYU;CHOI SUK-HUN;HAN SANG-YEOB |
分类号 |
H01L21/84 |
主分类号 |
H01L21/84 |
代理机构 |
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地址 |
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