| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a CCD-type solid-state imaging device capable of preventing a drop in transfer efficiency of a charge transfer device and deterioration in characteristics of a peripheral circuit. SOLUTION: The method includes a step (Fig. 1(a)) of forming a conductive film 3 via a gate insulation film 2 on a semiconductor substrate 1; a step (Fig. 1(b)) of forming a first electrode 3a by patterning the conductive film 3 to leave the film 3 on a peripheral circuit region where the peripheral circuit on the semiconductor substrate 1 is to be formed, and on an electrode forming region where the first electrode of the charge transfer device is to be formed; and a step (Fig. 1(e)) of forming a second electrode 6 for constituting the charge transfer device after the formation of the first electrode. Further, it includes a step (Fig. 2(i)) of forming a gate electrode 3b which is a component of the peripheral circuit by patterning the conductive film 3 left on the peripheral circuit region after the formation of the second electrode 6. COPYRIGHT: (C)2008,JPO&INPIT
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