| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element capable of multiplying charges, generated and stored in a photoelectric transducer. SOLUTION: The CCD solid-state imaging element comprises a photoelectric transducer (an n-layer 2, a p-layer 3) formed in a semiconductor substrate 1, a charge-transfer channel 5 for transferring the charges generated in the photoelectric transducer, a charge readout region 6 for reading out the charges stored in the photoelectric tansducer to the charge-transfer channel 5, and a charge readout electrode 8 formed on the charge readout region 6 via a gate insulating film 10 and controlling the read out of the charges stored in the photoelectric transducer, to the charge-transfer channel 5. In a plan view, a gap is provided between the photoelectric transducer and the charge readout electrode 8. COPYRIGHT: (C)2008,JPO&INPIT
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