Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts

摘要

A flip chip light emitting diode die ( 12 ) includes a light-transmissive substrate ( 20 ) and a plurality of semiconductor layers ( 22 ) are disposed on the light-transmissive substrate ( 20 ). The semiconductor layers ( 22 ) define a light-generating p/n junction. An electrode ( 30 ) is formed on the semiconductor layers ( 22 ) for flip-chip bonding the diode die ( 12 ) to an associated mount ( 14 ). The electrode ( 30 ) includes an optically transparent layer ( 42 ) formed of a substantially optically transparent material adjacent to the semiconductor layers ( 22 ) that makes ohmic contact therewith, and a reflective layer ( 44 ) adjacent to the optically transparent layer ( 42 ) and in electrically conductive communication therewith.