| 摘要 |
PROBLEM TO BE SOLVED: To provide a lateral double-diffused MOS transistor with high withstand voltage and low on-resistance characteristics. SOLUTION: The lateral double-diffused MOS transistor includes a second conductivity type semiconductor layer 1, a first conductivity type element region 2, a second conductivity type body diffusion region 3, gate insulating films 4a and 4b, a gate electrode 5, a first conductivity type source diffusion region 6, a first conductivity type drain diffusion region 7, and a LOCOS 10 formed in a region along the drain diffusion region 7. In the lateral direction of the element region 2, the impurity concentration of a specific region 2a occupying the area from a first boundary location 15 to a second boundary location 16 is lower than that of a main region 2b occupying the area from the body diffusion region 3 to the first boundary location 15. COPYRIGHT: (C)2008,JPO&INPIT
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