| 摘要 |
PROBLEM TO BE SOLVED: To prevent a metal film from being oxidized when a photoresist is ashed. SOLUTION: In the ashing step of removing a photoresist 63 for use in the etching of the portion other than a lower electrode 62A of a titanium nitride film 62 using MMT equipment, a wafer 1 is transferred onto a susceptor 21. Then, the wafer 1 is heated to a predetermined temperature in a range from a room temperature to 90°C. Mixed gas of hydrogen gas and oxygen gas is controlled for supply so that a flow fraction becomes two or more. High frequency power is applied to a cylindrical electrode 15 via a matching box 18 from a high frequency power supply 17. Magnetron discharge occurs in cylindrical magnets 19 and 19, an electric charge is trapped in a space over the wafer 1, and high-density plasma is formed in a plasma forming region 16. Since the ashing of a photoresist caused by the oxidizing action of oxygen and the prevention of the oxidation of the titanium nitride film caused by the reduction action of hydrogen act simultaneously, it is possible to remove the photoresist, preventing the oxidation of the titanium nitride film. COPYRIGHT: (C)2008,JPO&INPIT
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