| 摘要 |
PROBLEM TO BE SOLVED: To provide an element structure of a nonvolatile memory element which is suitable for miniaturization and speed-up, because it is difficult to miniaturize and speed up a nonvolatile memory element composed of a capacitor and a transistor. SOLUTION: A memory section is composed of variable resistance films 23 which are formed on lower electrodes 25 and striped second lines 21 which are formed perpendicularly to first lines 22 on the variable resistance films 23, cover the top including sides of the variable resistance films 23 and are extended toward the outside. The top of the variable resistance films 23 on the lower electrodes 25 are electrically connected with the top of connection electrodes 27 through the second lines 21 and electrodes are lead out downward from them. In this way, element isolation in the nonvolatile memory element 20 whose variable resistance films 23 are used as memory materials can be reliably performed by isolating the variable resistance films 23 and the connection electrodes 27 so that they may not contact with one another directly. COPYRIGHT: (C)2008,JPO&INPIT
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