| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be so formed that a pair of transistors constituting a current mirror circuit in a sense circuit have the same characteristics. SOLUTION: This semiconductor device comprises a first and a second ring-shaped gates 130 and 131, a common diffusion layer 132A formed around the first and the second ring-shaped gates, wiring 141 for electrically and equipotentially connecting the first ring-shaped gate 130 and the second ring-shaped gate 131, and an STI region 160 provided around the diffusion layer 132A. In the sense circuit wherein the current mirror circuit is formed by a first transistor corresponding to the first ring-shaped gate 130 and a second transistor corresponding to the second ring-shaped gate 131, the gates 150 of dummy transistors which do not function as transistors are provided between the first and the second ring-shaped gates and the STI region in both the first direction and the second direction nearly perpendicular to the first direction. COPYRIGHT: (C)2008,JPO&INPIT
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