| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive MOS transistor integrated element assuring high voltage resistance and reduction in size and also ensuring short manufacturing TAT and reduced manufacturing cost, and to provide a method for manufacturing the same. SOLUTION: The method for manufacturing the MOS transistor integrated element includes a first step of forming a first low concentration diffusing layer to a region to form a high voltage resistance MOS transistor, a second step of simultaneously forming a separation trench for separating a high voltage resistance MOS transistor forming region and a low voltage resistance MOS transistor forming region and a gate trench of the high voltage resistance MOS transistor, a third step of forming a plate type gate electrode to the low voltage resistance MOS transistor forming region, and a fourth step of forming a second low concentration diffusing layer to the low voltage resistance MOS transistor forming region. COPYRIGHT: (C)2008,JPO&INPIT
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